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   Energy Band Correction Due To One Dimension Tension in Phosphorene  
   
نویسنده Izadparast Ali ,Sahebsara Peyman
منبع Journal Of Optoelectronical Nanostructures - 2016 - دوره : 1 - شماره : 4 - صفحه:59 -67
چکیده    Among graphene-like family, phosphorene is a typical semiconducting layered material, which can also be a superconductor in low temperature. applying pressure or tension on phosphorene lattice results in changing the hopping terms, which change the energy bands of the material. in this research we use the tight-binding hamiltonian, including relevant hopping terms, to calculate energy bands of normal and under tension phosphorene. our results show that the energy gap decreases by decreasing 𝒕𝟐/𝒕𝟏from 3 to 2, and finally the gap disappears.
کلیدواژه Phosphorene ,Band Structure ,Electron Conductivity ,Tension ,Energy Band Gap
آدرس Isfahan University Of Technology, Department Of Physics, ایران, Isfahan University Of Technology, Department Of Physics, ایران
پست الکترونیکی sahebsara@gmail.com
 
 

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