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   Quantum Modeling of Light Absorption in Graphene Based Photo-Transistors  
   
نویسنده Faezinia Hamid ,Zavvari Mahdi
منبع Journal Of Optoelectronical Nanostructures - 2016 - دوره : 1 - شماره : 4 - صفحه:9 -20
چکیده    Graphene based optical devices are highly recommended and interested for integrated optical circuits. as a main component of an optical link, a photodetector based on graphene nano-ribbons is proposed and studied. a quantum transport model is presented for simulation of a graphene nano-ribbon (gnr) -based photo-transistor based on non-equilibrium green’s function method. in the proposed model a self-energy matrix is introduced which takes the effect of optical absorption in gnr channel into account. the self-energy matrix is treated as a scattering matrix which leads to creation of carriers. the transition matrix element is calculated for optical absorption in graphene channel and is used to obtain the optical interaction self-energy. the resulting self-energy matrix is added to retarded green’s function and is used in transport equations for calculation of current flow in the photo-transistor. by considering the effect of optical radiation, the dark and photocurrent of detector are calculated and results are used for calculation of responsivity.
کلیدواژه Non-Equilibrium Green’S Function; Graphene Nano-Ribbon; Photo-Transistor; Self Energy.
آدرس Islamic Azad University, Tabriz Branch, Department Of Electronic Engineering, ایران, Islamic Azad University, Urmia Branch, Department Of Electronic Engineering, ایران
پست الکترونیکی m.zavvari@iaurmia.ac.ir
 
 

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