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   Self-Heating Effect Modeling of A Carbon Nanotube-Based Field-Effect Transistor (Cntfet)  
نویسنده Pourchitsaz Kazem ,Shayesteh Mohammad Reza
منبع Journal Of Optoelectronical Nanostructures - 2019 - دوره : 4 - شماره : 1 - صفحه:51 -65
چکیده    We present the design and simulation of a single-walled carbon nanotube (swcnt)-based field-effect transistor (fet) using silvaco tcad. in this paper, the self-heating effect modeling of the cnt mosfet structure is performed and compared with conventional mosfet structure having same channel length. the numerical results are presented to show the self-heating effect on the i–v characteristics of the cnt mosfet and conventional mosfet structures. results from numerical simulation show that the maximum temperature rise and the performance degradation of the cnt mosfet are quite lower than that of the conventional mosfet counterpart. these advantages are contributed by the good electrical and thermal properties of the swcnts. therefore, swcnt materials have a high capability for the development of active devices with low power dissipation and good reliability at high operating temperature.
کلیدواژه Field Effect Transistor (Fet) ,Singlewalled Carbon Nanotube (Swcnt) ,Self-Heating Effect ,Transistor Characteristic ,Threshold Voltage
آدرس Islamic Azad University, Yazd Branch, Department Of Electrical Engineering, Iran, Islamic Azad University, Yazd Branch, Department Of Electrical Engineering, Iran
پست الکترونیکی shayesteh@iauyazd.ac.ir

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