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   Effects of the Channel Length on the Nanoscale Field Effect Diode Performance  
   
نویسنده Rezaei Arash ,Azizollah-Ganji Bahram ,Gholipour Morteza
منبع Journal Of Optoelectronical Nanostructures - 2018 - دوره : 3 - شماره : 2 - صفحه:29 -39
چکیده    Field effect diode (fed)s are interesting device in providing the higher on-state current and lower off–state current in comparison with soi-mosfet structures with similar dimensions. the impact of channel length and band-to-band tunneling (btbt) on the off-state current of the side contacted fed (s-fed) has been investigated in this paper. to find the lowest effective channel length, this device is simulated with 75, 55 and 35 nm channel length and the results obtained are presented in this article. our numerical results show that the ion/ioff ratio can be varied from 10^4 to 10° for s-fed as the channel lengths decrease. we demonstrate that for channel lengths shorter than 35 nm by considering the band-to-band tunneling model, the sfed device does not turn off
کلیدواژه Field Effect Diode (Fed) ,Side Contacted Fed (Sfed) ,Bandto Bandtunneling (Btbt)
آدرس Babol Noshirvani University Of Technology, Department Of Electrical &Amp; Computer Engineering, ایران, Babol Noshirvani University Of Technology, Department Of Electrical &Amp; Computer Engineering, ایران, Babol Noshirvani University Of Technology, Department Of Electrical &Amp; Computer Engineering, ایران
پست الکترونیکی m.gholipour@niit.ac.ir
 
 

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